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| 眉山天樂半導體6英寸SiC晶體產品標準 6-inch SiC Ingot Specification | |||||
| 序號 Item | 等級 Grade | 精選級（Z級） Zero MPD Grade | 工業級（P級） Production Grade | 測試級（D級） Dummy Grade | |
| 1.晶體參數 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏離度 Surface orientation error | Off axis：4.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.電學參數 Electrical Parameters | |||||
| 2.1 | 摻雜劑 Dopant | Nitrogen | |||
| 2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.機械參數 Mechanical Parameters | |||||
| 3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | ≥15mm | |||
| 3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位邊長度 Primary Flat Length | Ingot flat length | 47.5mm±2.0mm | ||
| Seed flat length | None | ||||
| 4.結構 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.2 | 螺位錯 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.3 | 基平面位錯 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.4 | 刃位錯 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.晶體質量 Ingot Quality | |||||
| 5.1 | 六方空洞 Hex plate | None | Cumulative area ≤0.1% | ||
| 5.2 | 劃痕 Scratches | None | Cumulative length ≤1x wafer diameter | ||
| 5.3 | 缺口/崩邊/裂紋/疵點/沾污 Edge chips/indents/cracks/stains/contamination | None | ≤0.2 mm | ＜3， ≤1mm width and depth | |
| 5.4 | 目測包裹物 Visual carbon inclusion | None | Cumulative area ≤0.05% | Cumulative area ≤3% | |
| 5.5 | 多型 Polytype areas | None | None | Cumulative area ≤3% | |
| 6.邊緣輪廓 Edge | |||||
| 6.1 | 邊緣裂紋 Edge Cracks | None | None | Cumulative length ≤20mm, single length ≤2 mm | |
| 7.包裝 Packaging | |||||
| 7.1 | 晶錠標記 Ingot Marking(carbon side) | Carbon face label | |||
| 7.2 | 包裝 Packaging | 單晶錠包裝 Single Ingot Package | |||
| Notes: None means no request. | |||||
| 眉山天樂半導體6英寸SiC晶體產品標準 6-inch SiC Ingot Specification | |||||
| 序號 Item | 等級 Grade | 精選級（Z級） Zero MPD Grade | 工業級（P級） Production Grade | 測試級（D級） Dummy Grade | |
| 1.晶體參數 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏離度 Surface orientation error | Off axis：4.0°toward <11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.電學參數 Electrical Parameters | |||||
| 2.1 | 摻雜劑 Dopant | Nitrogen | |||
| 2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.機械參數 Mechanical Parameters | |||||
| 3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | ≥15mm | |||
| 3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位邊長度 Primary Flat Length | Ingot flat length | 47.5mm±2.0mm | ||
| Seed flat length | None | ||||
| 4.結構 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.2 | 螺位錯 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.3 | 基平面位錯 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.4 | 刃位錯 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.晶體質量 Ingot Quality | |||||
| 5.1 | 六方空洞 Hex plate | None | Cumulative area ≤0.1% | ||
| 5.2 | 劃痕 Scratches | None | Cumulative length ≤1x wafer diameter | ||
| 5.3 | 缺口/崩邊/裂紋/疵點/沾污 Edge chips/indents/cracks/stains/contamination | None | ≤0.2 mm | ＜3， ≤1mm width and depth | |
| 5.4 | 目測包裹物 Visual carbon inclusion | None | Cumulative area ≤0.05% | Cumulative area ≤3% | |
| 5.5 | 多型 Polytype areas | None | None | Cumulative area ≤3% | |
| 6.邊緣輪廓 Edge | |||||
| 6.1 | 邊緣裂紋 Edge Cracks | None | None | Cumulative length ≤20mm, single length ≤2 mm | |
| 7.包裝 Packaging | |||||
| 7.1 | 晶錠標記 Ingot Marking(carbon side) | Carbon face label | |||
| 7.2 | 包裝 Packaging | 單晶錠包裝 Single Ingot Package | |||
| Notes: None means no request. | |||||
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