晶格常數

Lattice Parameters

a=5.148, c=13.863

密度

Density

4.64g/cm3

熔點

Melting Point

1250℃

居里溫度

Curie Point

1142±2℃

硬度

Mohs Hardness

5

介電常數

Dielectric Constant

ε11/ε0=85; ε33/ε0=29.5

電阻系數Thermal Conductivity

38W/m/℃at25℃

熱膨脹系數

Thermal Expansion Coefficient

a1=a2=2×10-6/℃, a3=2.2×10-6/℃at25℃

壓電常數

Piezoelectric Strain Constant

d22=2.04×10-11C/N,d33=0.6×10-11C/N,d15=7X10-11C/N，d31=-0.1X10-11C/N

Elastic Stiffness Constant

C11E=2.04×1011N/m2,C33E=2.46×1011N/m2,

直徑

Diameter

76.2mm±0.3mm

100.0mm±0.3mm

76.2mm±0.3mm

100.0mm±0.3mm

76.2mm±0.3mm

100.0mm±0.3mm

基準面

Orientation Flat (OF)

22mm±2mm

22mm±2mm

Perpendicular to X ± 0.2°

22mm±2mm

22mm±2mm

Perpendicular to X ± 0.2°

22mm±2mm

22mm±2mm

Perpendicular to X ± 0.2°

第二參考面

Second Refer. Flat (RF)

10mm±3mm

Cw180° ± 0.5° from OF

10mm±3mm

Cw225° ± 0.5° from OF

10mm±3mm

Cw270° ± 0.5° from OF

厚度

Thickness

500um ± 20um

350um ± 20um

500um ± 20um

350um ± 20um

500um ± 20um

350um ± 20um

傳播表面

Propagating surface

“+” side

Ra ≤ 8 

“+” side

Ra ≤ 8 

“+” side

Ra ≤ 8 

晶片背面

Wafer backside

GC#1000lapped & etched

0.2um≤Ra≤0.7um

GC#1000lapped & etched

0.2um≤Ra≤0.7um

GC#1000lapped & etched

0.2um≤Ra≤0.7um

TTV

≤ 10um

LTV

≤ 2.0um within an area of5×5mm2

PLTV

≥ 95% (3mmfrom edge excluded)

BOW

-25um ≤ Bow ≤ +25um

居里溫度

Curie Temperature

1142℃±3℃(DTA method)

邊緣倒角Edge Beveling

Edge rounding